Transistor silicon military KT3117A (2T3117A) analogue 2N2121, 2N2221 USSR 2 pcs
  • Transistor silicon military KT3117A (2T3117A) analogue 2N2121, 2N2221 USSR 2 pcs
  • Transistor silicon military KT3117A (2T3117A) analogue 2N2121, 2N2221 USSR 2 pcs

Transistor silicon military KT3117A (2T3117A) analogue 2N2121, 2N2221 USSR 2 pcs

  

販売価格 : 1,520円  
特価(税込) : 775円割引: 49%OFF

  • 商品番号 : B07PN9J19R
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  • Transistor silicon military KT3117A (2T3117A) analogue 2N2121, 2N2221 USSR 2 pcs


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商品の説明

2T3117A transistors silicon epitaxial planar structure npn pulse. 2T3117A: The structure of the transistor: npn Pk max - collector power dissipation: 300 mW; fgr - Cutoff frequency current transfer ratio of the transistor circuit for the common-emitter: 200 MHz; Ukbo max - Maximum voltage collector-base for a given reverse collector current and open-circuit emitter: 60; Uebo max - Maximum voltage of the emitter-base for a given reverse current of the emitter and collector open circuit: 4; Ik max - Maximum allowable DC Collector Current: 400mA; Ikbo - Reverse Collector Current - current through the collector junction for a given reverse voltage collector-base and open emitter output: less than 10 mA (60V); h21E - Static current gain for a common-emitter circuit in the large-signal: 40 ... 200; Ck - Capacity of the collector junction: no more than 10 pF; Rke us - saturation resistance between the collector and emitter: no more than 1.2 ohms


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Transistor silicon military KT3117A (2T3117A) analogue 2N2121, 2N2221 USSR 2 pcs
販売価格 : 1,520円  
特価(税込) : 775円割引: 49%OFF